Abstract
The single-particle relaxation time of the two-dimensional electron gas in SiGe/Si/SiGe quantum wells is calculated. Many-body effects beyond the random-phase approximation become important at low electron density. For charged impurity scattering (remote doped), the importance of these many-body effects as functions of the electron density and spacer width is analyzed. Induced by many-body effects, a strong reduction of the single-particle relaxation time at low electron densities is predicted. The relation with the transport scattering time is described, multiple-scattering effects are commented, and the determination of many-body effects in existing samples is discussed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
