Single-Nanowire CMOS Inverter Based on Ambipolar Si Nanowire FETs

Abstract

We have successfully fabricated an inverter based on ambipolar Si nanowire FETs. The inverter is consisted of two identical nanowire FETs on a single Si nanowire. The engaged FETs showed asymmetric ambipolar characteristics under positive and negative gate bias. A CMOS-like inverter can be realized on the single nanowire, where one of the devices behaves as an nMOSFET and the other behaves as a pMOSFET.