Single-molecule Magnets (SMM) spin channels connecting FeMn antiferromagnet and NiFe ferromagnetic electrodes of a tunnel junction

Abstract

The integration of single-molecule magnets (SMMs) into magnetic tunnel junctions (MTJs) offers significant potential for advancing molecular spintronics, particularly for next-generation memory devices, quantum computing, and energy storage technologies such as solar cells. In this study, we present the first demonstration of SMM-induced spin-dependent properties in an antiferromagnet-based MTJ molecular spintronic device (MTJMSD). We engineered cross-junction-shaped devices comprising FeMn/AlOx/NiFe MTJs. The AlOx barrier thickness where the exposed junction edges meet was comparable to the SMM length, facilitating the incorporation of SMM molecules as spin channels for spin-dependent transport. The SMM channels enabled long-range magnetic moment ordering around molecular junctions, which were precisely engineered via fabrication processes. The SMM, composed of a [Mn6(μ3-O)2(H2N-sao)6(6-atha)2(EtOH)6] (H2N-saoH = salicylamidoxime, 6-atha = 6-acetylthiohexanoate) complex, featured thioester groups at the ends that upon hydrolysis they form bonds with the magnetic electrodes. SMM-treated junctions demonstrated a significant current enhancement, reaching up to 7 μA at an input voltage of 60 mV. Furthermore, SMM-doped junctions exhibited current stabilization in the μA range at lower temperatures, whereas the bare electrodes showed current suppression to the picoampere range. Magnetization measurements conducted at 55 K and 300 K on pillar-shaped devices revealed a reduction in magnetic moment at low temperatures. Additionally, Kelvin probe atomic force microscopy (KPAFM) measurements confirmed that SMM integration transformed the electronic properties over long ranges.These findings are attributed to the spin channels formed between magnetic metal electrodes, which enhance spin polarization at each magnetic electrode. Our research highlights the potential of using antiferromagnetic materials, characterized by minimal stray fields and zero net magnetization, to transform MTJMSD devices.