Abstract
We report scanning tunneling microscopy and scanning tunneling spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ∼4.5°, the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS measurements (with a time scale about 100 s). This behavior was attributed to the decoupling between the twisted graphene and the substrate during the measurements, which lowers the carrier density of graphene simultaneously.
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