Abstract

In this paper, a single-inductor multiple-output step-down converter for high-power LED applications with independent current control based on SiC SBD is proposed. To reduce the EMI issue in high voltage high frequency switching application, SiC Schottky barrier diodes (SBD) are used. For each branch of the output channels, a high-side MOSFET driver is proposed for high source voltage application. A prototype is constructed and verified using a 180 V input voltage and three LED strings as load. The output voltage and the output power are about 150 V and 70 W, respectively. The experiment results show that the system efficiency reaches 92.5% and the reverse recovery current amplitude was decreased by 50% comparing with circuits based on Si fast recovery diodes (FRD).

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