Single‐Grain Boundaries in PTC Resistors

Abstract

Thin semiconducting barium titanate ceramic bars consisting of single grains joined together in series have been prepared, and the positive temperature coefficient of resistivity (PTCR) characteristics of strictly single‐grain boundaries in the materials were investigated. The resistivity (R)‐temperature (T) characteristics obtained for the present samples can be classified into typically three categories: (1) normal type PTCR characteristics, similar to those observed in usual ceramic samples, (2) saw‐tooth type PTCR characteristics, characterized by an abrupt increase in resistivity by more than three orders of magnitude at the Curie point, immediately follwoed by a monotonous decrease in it, and (3) flat type R–T characteristics, with substantially little or no resistivity jump. Of these R–T characteristics, normal type PTCR characteristics were the most frequently observed (about 60%; a total of 65 samples were examined). Flat type R–T characteristics were least frequently (about 10%) observed. Single boundaries with these three types of PTCR characteristics exhibited essentially the same ferroelectric capacitance–temperature characteristic; this demonstrates that the temperature dependence of the dielectric constant above the Curie point was not responsible for the PTCR anomalies. Single boundaries with normal and saw‐tooth type PTCR characteristics showed significantly nonlinear current‐voltage characteristics above the Curie point, which may be interpreted to be caused by a current strongly affected by traps (or surface acceptor states) present at the grain boundaries.