Single-Event Upsets for Single-Port and Two-Port SRAM Cells at the 5-nm FinFET Technology

Abstract

Single-event cross sections of single-port and two-port SRAM designs are presented at the 5-nm node for alpha particles, 14-MeV neutrons, thermal neutrons, and heavy ions for reduced and nominal supply voltages. Single-port SRAM shows higher susceptibility with low LET particles at nominal operating voltages. However, circuit and parasitic differences in designs lead to the two-port design having higher susceptibility to high LET particles. The stronger dependence of two-port SRAM on particle LET is due to the increased contribution of diffusion current to overall charge collection. The increased number of fins connected to a storage node for the two-port design significantly increases diffusion charge collection and SEU cross-section, despite increased critical-charge and cell size.