Abstract
The aim of this study is to analyze the single-event radiation performance of the junction (conventional bulk planar MOSFET) and junctionless FET (bulk planar junctionless device)-based cascoded narrow-band radio frequency (RF) low-noise amplifiers (LNAs). Two LNAs, one based on the conventional MOSFET and another based on the junctionless FET, are investigated for their single-event strike performance using numerical device simulations. The transient simulation results are interpreted in both the time and frequency domains. The collected charge (Qc) is used as a performance metric in the time domain, and the spurious frequencies introduced due to the radiation strike are analyzed in the frequency domain using spectrograms. It is found that, for a given dose, Qc is higher in the junctionless FET LNA. By postprocessing the single event transient (SET) results using Fast Fourier transform (FFT) and spectrogram operations, it is found that the range of the SET spectrum is wider in the junctionless FET LNA.
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