Single-Electron Transistor Based Implementation of NOT, Feynman, and Toffoli Gates

Abstract

NOT, Feynman, and Toffoli gates are the practical building blocks of reversible circuit synthesis techniques. NOT and Feynman gates are primitive quantum gates. Toffoli gates are macro-level gates and realized using various primitive quantum gates. In reversible circuit design papers, logic level circuits are first realized using NOT, Feynman, and Toffoli gates and then the Toffoli gates are decomposed into primitive quantum gates. However, realizations of reversible circuits using electronic devices are not given adequate emphasis. In this paper, we propose preliminary ideas of implementations of NOT, Feynman, and Toffoli gates using single-electron transistor (SET), which is a nano-electronic quantum-tunneling device. NOT gate implementation requires one SET and one pull-up resistor. Feynman gate implementation requires two SETs and two pull-up resistors. Three-input Toffoli gate implementation requires three SETs and two pull-up resistors. The average static power consumptions of NOT, Feynman, and three-input Toffoli gate realizations are 0.091 nW, 0.497 nW, and 0.504 nW, respectively. The proposed implementations will open a facet of nano-electronic low-power realizations of reversible circuits.