Abstract
We demonstrate extension of electron-beam lithography using conventional resists and pattern transfer processes to single-digit nanometer dimensions by employing an aberration-corrected scanning transmission electron microscope as the exposure tool. Here, we present results of single-digit nanometer patterning of two widely used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. The method achieves sub-5 nanometer features in poly (methyl methacrylate) and sub-10 nanometer resolution in hydrogen silsesquioxane. High-fidelity transfer of these patterns into target materials of choice can be performed using metal lift-off, plasma etch, and resist infiltration with organometallics.
Highlights
The protocol presented in this manuscript provides guidance for defining patterns with single-digit nanometer resolution in poly (PMMA) and hydrogen silsesquioxane (HSQ), which are two common electron-beam resists used in high-resolution patterning by electron-beam lithography
TEM windows consisted of approximately 30 nm thick PMMA resist for positive-tone PMMA (15 nm thick for negative-tone PMMA) spin cast on a 5 nm thick SiNx membrane
The TEM window used for HSQ lithography consisted of approximately 10 nm thick HSQ resist spin cast on a 27 nm thick Si membrane
Summary
The protocol presented in this manuscript provides guidance for defining patterns with single-digit nanometer resolution in poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane (HSQ), which are two common electron-beam resists used in high-resolution patterning by electron-beam lithography We achieve these results using an aberration-corrected scanning transmission electron microscope (STEM) as the exposure tool, outfitted with a pattern generator for controlling the electron beam. For dimensions around 4 nm, these demonstrations have required non-standard procedures such as use of assist structures[7] or long-exposure times for self-developing resists[8] Other nanopatterning techniques, such as electron-beam induced deposition[9] or scanning probe lithography[10,11], have proven capable of achieving sub-4 nm resolution, these require significantly longer exposure times compared to EBL. While state-of-the-art, commercial aberration-corrected STEM systems cost in the range of millions of dollars, they are available for use in several national user facilities, and some are accessible without cost
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