Abstract
Nd 1.85Ce 0.15CuO 4 single crystals of improved quality have been growth by the TSFZ method at an oxygen partial pressure in ambient atmosphere of 0.2, 0.1, 0.08 and 0.01 atm. Superconductivity in the as-grown state has been observed in the crystals grown at 0.08 and 0.01 atm. The improvement of the Ce distribution has been achieved due to a decreased value of the Ce distribution coefficient at low oxygen partial pressure in ambient atmosphere. The probability to obtain the same characteristics of the superconducting transition in the as-grown state as that in the crystals after post-growth high-temperature treatment seems to be very low because of oxidation during the cooling of the grown crystals from the crystallization temperature to room temperature.
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