Abstract
External cavity semiconductor lasers are demonstrated using a single-angled-facet semiconductor laser diode that does not require anti-reflection coating. A wide tuning bandwidth (7%, λ = 980 nm), large side-mode suppression ratio (50 dB, λ = 1590 nm), narrow linewidth (50 kHz), and high output power (13.5 mW) are achieved with conventional external cavity configurations.
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