Abstract
Cu2ZnSn(S,Se)4 (CZTSSe) thin films have been firstly deposited on heating quartz substrates by pulsed laser deposition (PLD) method using one-step process. The results of energy dispersive X-ray (EDX) spectroscopy show that there are some discrepancies of the elemental composition between targets and thin films. However, structural and optical properties of CZTSSe thin films show good tolerance to the composition deviation from stoichiometry. Both X-ray diffraction (XRD) and Raman spectra analysis indicate the internal compressive stress exists in CZTSSe thin films. Further transmission spectra demonstrate that the band gaps of CZTSSe thin films are higher than those of CZTSSe bulks. The internal compressive stress and the deficiency of Cu content in the films contribute to the enlargement of the band gaps of CZTSSe thin films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
