Abstract
We studied the growth of a single standing carbon nanotube (CNT) which was grown by plasma-enhanced chemical vapor deposition in the gate hole formed by conventional photolithography in the silicon nitride. The number of CNT per hole increases with increasing the gate hole diameter and a single CNT could be grown in a 3μm hole. A single standing CNT in a gate hole exhibited the turn-on field of 1.6V∕μm and the current density of 16μA at 3.3V∕μm. The emission currents follow the Fowler–Nordheim equation with a field enhancement factor of 1.14×107.
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