Abstract
Results obtained by an advanced growth of site-controlled quantum dots (SCQDs) onpre-patterned nanoholes and their integration into both photonic resonators andnanoelectronic memories are summarized. A specific technique has been pursuedto improve the optical quality of single SCQDs. Quantum dot (QD) layershave been vertically stacked but spectrally detuned for single SCQD studies.Thereby, the average emission linewidth of single QDs could be reduced from2.3 meV for SCQDs in a first QD layer close to the etched nanoholes down to 600 µeV in the third InAs QD layer. Accurate SCQD nucleation on large QDdistances is maintained by vertical strain induced QD coupling throughoutthe QD stacks. Record narrow linewidths of individual SCQDs down to∼110 µeV have been obtained. Experiments performed on coupled photonic SCQD–resonator devicesshow an enhancement of spontaneous emission. SCQDs have also been integrateddeterministically in high electron mobility heterostructures and flash memory operation atroom temperature has been observed.
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