Single Silicon Neuron Device Enabling Neuronal Oscillation and Stochastic Dynamics

Doohyeok Lim,Kyoungah Cho,Sangsig Kim

doi:10.1109/led.2021.3063954

Abstract

In this work, we report a fully CMOS-compatible single silicon neuron device, by exploiting interlinked positive and negative feedback loops. The neuron device exhibits the key features of leaky integrate-and-fire functionality and can produce neuronal oscillations that resemble biological oscillations. The stochastic nature and analog input-sensitivity of the feedback switching dynamics are observed in the device. Moreover, the neuronal oscillations of the two-terminal device do not require any power supplied by external bias lines.

Highlights

In this work, we report a fully CMOScompatible single silicon neuron device, by exploiting interlinked positive and negative feedback loops
These interlinked positive and negative feedback loops, which correspond to the mutual interactions between the latch-up and latch-down states, generate neuronal oscillations
The inherent stochasticity of the single silicon neuron device led to a distribution of inter-spike intervals, defined as the time difference between consecutive spikes in multiple leaky integrate-and-fire cycles (Fig. 4(a))

Summary

Introduction

We report a fully CMOScompatible single silicon neuron device, by exploiting interlinked positive and negative feedback loops. These interlinked positive and negative feedback loops, which correspond to the mutual interactions between the latch-up and latch-down states, generate neuronal oscillations. After the integration of a certain period of input voltage (Vin), the neuron device generated an output signal (i.e., the device fired) when a membrane potential crossed the firing threshold.

Results

Conclusion