Abstract
Electro-thermal destruction of n- and p-channel lateral double-diffused MOS in smart power ICs is investigated by electrical pulse experiments, simulations and failure analysis. It was observed experimentally and by TCAD simulation that the location of the hot spot plays very important role for single pulse energy capability. Damage both in silicon and copper metallization was observed. The n-DMOS exhibits better energy capability compared to p-DMOS due to better cooling efficiency of silicon area by the copper metallization. Effect of drift region length, doping profile and of copper metal thickness on energy capability is also analyzed.
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