Abstract
Silicon photo-multipliers (SiPM) consist in matrices of tiny, passive quenched avalanche photo-diode cells connected in parallel via integrated resistors and operated in Geiger mode. Novel types of SiPM are being developed at FBK-IRST (Trento, Italy). Despite their classical shallow junction n-on-p structure the devices are unique in their enhanced photo-detection efficiency (PDE) for short-wavelengths and in their low level of dark rate and excess noise factor. After a summary of the extensive SiPM characterization we will focus on the study of PDE and the single photon timing resolution.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
