Abstract
A two-dimensional tetra-lateral position-sensitive cap-resistive-layer silicon photomultiplier (CRL-SiPM) is employed as a single-photon imaging sensor at room temperature. The CRL-SiPM has only four anodes and one back cathode with an active area of 2.77 mm × 2.77 mm and a micro avalanche photodiode cell pitch of ~10 μm. It achieved a 150 μm-linewidth-resolved single-photon image, which is near the device's theoretical intrinsic single-photon position resolution limit of ~115 μm. With increasing light intensity, the position resolution of the device improved. When the mean photoelectron numbers were 1.34 and 41.56, the corresponding intrinsic position resolutions were 101.6 and 14.08 μm, respectively. Finally, owing to the single photoelectron imaging capability of the CRL-SiPM, we achieved the lensless imaging of dark counting sites, i.e., the locations of thermal carriers inducing avalanche breakdown of the device.
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