Abstract
The work reports the manipulation of nitrogen-vacancy centres in chemical vapor deposition grown single crystal diamonds by incorporation of nitrogen, boron and oxygen during the growth process. Single photon emission measurements were performed on diamond samples by using continuous wave and pulsed laser of wavelength 532 nm. The second order auto-correlation measurement 0.3<g2(0)<0.6 on nitrogen incorporated diamond sample shows the anti-bunching behavior of photons emerging from the population of one- and two-color centres. However, the correlation measurement 0.6<g2(0)<0.8 on oxygen and boron incorporated diamond samples show the anti-bunching behaviour of photons due to population of two- and three-color centres present in the samples. The result opens the possibilities of in situ development of nitrogen-vacancy centres in diamond during the growth process for next generation quantum computing devices.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
