Abstract
Various new developments for array detectors based on Silicon Single-Photon Avalanche Diodes (SPADs) were reported. Improved Si-SPAD technologies brought higher detection efficiency in the red wavelength range. Higher performance was attained with InGaAs/lnP SPADs by employing fast circuit techniques and by monolithic resistor-detector integration. New lnGaAs(P)/lnP SPAD array detectors provide remarkable performance in the near-infrared range (NIR). Photon detection at longer wavelengths (up to 3.5 μm) was pursued with antimonide SPADs and Superconducting Single-Photon Detectors (SSPD).
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