Abstract
The infrared absorption spectrum in the range 670-250 cm −1 (15–40 μ) of silicon bombarded with fast neutrons has been studied, and the absorption bands at 488, 417 and 332 cm −1 are attributed to a single phonon absorption process connected with the excitation of the fundamental modes TO, LO and LA, respectively. These fundamental modes become active because of the lattice distortion resulting from the defects produced. Thus, the phonon energies in silicon have been measured and are in good agreement with those calculated by JOHNSON on the basis of combination band spectra occuring in silicon perfect single crystals and those obtained by using the method of inelastic stattering of neutrons.
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