Single-Period InAs–GaAs Quantum-Dot Infrared Photodetectors

Abstract

In this letter, we investigate the performance of single-period InAs-GaAs quantum-dot (QD) infrared photodetectors, in which the single-period QD is sandwiched by different thicknesses of the undoped GaAs confinement layers. By using a 5-nm p-type GaAs layer as a current blocking barrier, the investigated three devices exhibit no response, the highest response, and the medium response, respectively. It is attributed to three different electron occupancy situations in the QD region resulted from the various locations of the Fermi level. A higher barrier for the thermionic emission current is observed for the device with a lower Fermi level in the QD structure. It is attributed to the acceptor-like behavior of the depleted QD such that a higher barrier height would be observed.