Abstract

We report the preparation of a 780.2 nm and 852.3 nm laser device based on single-pass periodically poled magnesium-oxide-doped lithium niobate (PPMgO:LN) bulk crystals and diode-laser-seeded fiber amplifiers. First, a single-frequency continuously tunable 780.2 nm laser of more than 600 mW from second-harmonic generation (SHG) by a 1560.5 nm laser can be achieved. Then, a 250 mW light at 852.3 nm is generated and achieves an overall conversion efficiency of 4.1% from sum-frequency generation (SFG) by mixing the 1560.5 nm and 1878.0 nm lasers. The continuously tunable range of 780.2 nm and 852.3 nm are at least 6.8 GHz and 9.2 GHz. By employing this laser system, we can conveniently perform laser cooling, trapping and manipulating both rubidium (Rb) and cesium (Cs) atoms simultaneously. This system has promising applications in a cold atoms Rb-Cs two-component interferemeter and in the formation of the RbCs dimer by the photoassociation of cold Rb and Cs atoms confined in a magneto-optical trap.

Highlights

  • The special structure of alkali metal atoms is the foundation of precision spectra, laser cooling and trapping of atoms, atom interferometers, atomic frequency standards, etc

  • The first master-oscillator power fiber amplifier (MOPFA) consists of a compact distributed feedback (DFB) diode laser at 1560.5 nm and a 10 W erbium-doped fiber amplifier (EDFA), and another MOPFA consists of a compact DFB at 1878.0 nm and a 2 W thulium-doped fiber amplifier (TDFA)

  • On the basis of our previous experiment, we find the optimized phase matching by adjusting the temperature of the periodically poled magnesium-oxide-doped lithium niobate (PPMgO):LN crystal in a single-pass second-harmonic generation (SHG) experiment

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Summary

Introduction

The special structure of alkali metal atoms is the foundation of precision spectra, laser cooling and trapping of atoms, atom interferometers, atomic frequency standards, etc. Amongst these atoms, rubidium (Rb) and cesium (Cs) have been studied in the greatest detail. The common means to produce high-power 780 nm and 852 nm laser beams are semiconductor lasers with tapered amplifiers, a master-oscillator power amplifier (MOPA) and Ti:sapphire lasers. These systems can only operate in a relatively quiet and clean laboratory environment. The disadvantages of semiconductor MOPA systems and Ti:sapphire lasers, such as high cost, large size, and sensitivity to vibration and temperature fluctuations, are obvious

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