Abstract
We have successfully fabricated an inverter based on ambipolar Si nanowire FETs. The inverter is consisted of two identical nanowire FETs on a single Si nanowire. The engaged FETs showed asymmetric ambipolar characteristics under positive and negative gate bias. A CMOS-like inverter can be realized on the single nanowire, where one of the devices behaves as an nMOSFET and the other behaves as a pMOSFET.
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