Abstract

Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n+-i-n+ InP nanowires. The axial doping profile of the n+-i-n+ InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n+-i-n+ InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

Highlights

  • Over the past decade, terahertz time-domain spectroscopy (THz-TDS) has emerged from being a laboratory-based technique to find a number of industrial and commercial applications [1]

  • The manufacture of photoconductive emitters or detectors remains limited and at high cost, owing to the challenges associated with the production of semiconductors that exhibit these desirable optoelectronic

  • We have previously shown that single GaAs/AlGaAs nanowires can provide many of the desired properties [18], suitable for use as sensitive detectors in THz-TDS

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Summary

Introduction

Terahertz time-domain spectroscopy (THz-TDS) has emerged from being a laboratory-based technique to find a number of industrial and commercial applications [1]. To further characterize these n+-i-n+ InP nanowires, the photoconductivity lifetime and electron mobility of an ensemble of the n+-i-n+ InP nanowires were measured by time-domain optical pump-THz probe spectroscopy [18, 19] (details are provided in the online supplementary information).

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