Abstract
Properly designed oxide-confined vertical cavity surface emitting laser (VCSEL) allows leakage of the optical modes from the all-semiconductor core region to the selectively oxidized periphery if the orthogonality between the core mode and the modes on the periphery is broken by the oxidation-induced optical field redistribution. The leakage losses are stronger for high-order transverse modes, which have a higher field intensity close to the oxidized region. Single mode lasing in the fundamental mode can thus proceed up to large aperture diameters. The 850-nm GaAlAs thick oxide aperture VCSEL based on this concept is designed, modeled, and fabricated, showing single-mode lasing with the aperture diameters up to 5 μm. Side mode suppression ratio >20 dB is realized at the current density of ~10KA/Cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> in devices with the series resistance of 90 Ω.
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