Abstract

We fabricated a floating GaN microdisk supported by a silicon pillar through photolithography, dry-etching GaN, and isotropic wet-etching silicon methods. Single-mode ultraviolet whispering gallery mode (WGM) lasing was obtained from the floating GaN microdisk under optical pumping conditions at room temperature. The features of WGM lasing, i.e., the threshold, emission intensity, and lasing mode number, were characterized. A two-dimensional finite-difference time-domain simulation about the optical field contour profile also confirmed the resonance mechanism of WGM lasing. This work can help realize single-mode WGM lasing with high quality factor and low threshold.

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