Abstract
In this paper, we demonstrate a high-power erbium-doped fiber amplifier pumped by single-mode titanium sapphire (Ti:S) laser at 980 nm. The highest output power of 22.6 dBm is measured at 1549 nm with an input signal power of 4 dBm and a pump power of 300 mW. This corresponds to power-conversion efficiency (PCE) of 60, providing 95 quantum efficiency. The experimental results show the feasibility of using a single-mode laser from a high-power semiconductor chip to produce high-efficiency booster amplifiers. (c) 2005 Wiley Periodicals, Inc.
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