Abstract
This work presents the fabrication and characterization of a highly sensitive all printed photo-detector based on a single layer active thin film. The active region consists of a composite of MEH:PPV and MoS 2 quantum dots. The device was fabricated using reverse offset printing for the electrodes and hybrid surface acoustic wave Electrohydrodynamic atomization (SAW-EHDA) for thin film deposition. The device structure consists of interdigitated electrode pairs to increase the active exposure area and the sensitivity in return. The structure also has the advantage of having a single active layer without the top electrode making its fabrication a lot easier and simpler while improving the device robustness and stability. MoS 2 quantum dots improve the device sensitivity towards exposure to ultraviolet (UV) region making the device an excellent candidate for commercial UV index sensors in wearable devices.
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