Single layer chemical vapor deposition photoresist for 193 nm deep ultraviolet photolithography

Abstract

The chemical vapor deposition resist film plasma polymerized methyl silane (PPMS) can be used as a single layer photoresist for optical lithography at 248 and 193 nm wavelengths. Upon exposure, the PPMS undergoes efficient photo oxidation in the presence of air to yield a siloxane network (PPMSO) giving patterns that can be dry developed using a chlorine-HBr plasma. After dry development, the PPMSO can be used to transfer a pattern through organic low κ materials, or can be converted to a silicon dioxide hardmask using a conventional resist stripper, then used to transfer patterns into polysilicon.