Abstract
This research paper proposes a numerical analysis of a new Cu(In1-xGax)Se2 (CIGS) based solar cell integrating an ultrathin absorber layer. The CIGS model is performed from the theoretical and experimental investigations taking into account the physical properties, dimensions, and thicknesses of the different layers by using Atlas SILVACO-TCAD tools. To improve the overall efficiency, magnesium fluoride (MgF2) thin film is used as the antireflective coating to maximize the photocurrent from the incident light intensity. The influence of the minority carrier lifetime, density of state, and interface defect density in the CIGS on the PV performance are investigated under the AM1.5 spectrum, 300 K. The novelty of the proposed solar cell consists of a CuInSe working as a back-surface field layer (BSF). The simulation results point out that the CuInSe BSF layer has a strong effect on cell performance. The use of ultrathin absorber layers (≤1 μm) can provide a new solution for recent advanced research on this topic. The investigation illustrates potential results for conversion efficiency improvement up to 24.5 % (Voc =751 mV, Jsc =41.44 mA/cm2, FF = 78.63 %).
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