Abstract
Abstract Single junction hydrogenated amorphous silicon solar cells having a high conversion efficiency of 13.2% were developed by combining three approaches. First, a new type of p-layer, such as (a-Si/a-C)n multilayers, was investigated. The high open-circuit voltage was obtained without lowering the short-circuit current and the fill factor. Second, alternately repeating deposition and hydrogen plasma treatment method was applied to the fabrication of an a-SiC or wide gap a-Si : H films for p/i interface layer. High photoconductive and wide bandgap materials were obtained applicable to the p/i buffer layers. Third, the relationships between defect density of films or fill factors of solar cells and hydrogen radical in plasma were investigated. It was suggested that the H∗/SiH∗ ratio was an effective parameter to improve the defect and fill factor, and the excess hydrogen radical deteriorated quality of films and cells.
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