Abstract
Formation of laterally ordered single InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InGaAs/GaAs superlattice templates on GaAs (311)B by molecular beam epitaxy is achieved through optimization of growth temperature, InAs amount, and annealing. Directed self-organization of these QD arrays is accomplished by coarse substrate patterns providing absolute QD position control over large areas. Due to the absence of one-to-one pattern definition the site-controlled QD arrays exhibit excellent optical properties revealed by resolution limited (80 μeV) linewidth of the low-temperature photoluminescence from individual QDs.
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