Abstract
A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide has been developed. The new structure is fabricated using a single step of epitaxial growth. Lasers with threshold currents as low as 9.5 mA (150 μm long) were obtained. These lasers exhibit operation in a single spatial and longitudinal mode, have differential quantum efficiencies exceeding 45%, and a characteristic temperature of 175° C. They emit more than 12 mW/facet of optical power without any kinks.
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