Single Gate Graphene Nanoribbon-on-Insulator (GNROI) FET as a Novel Strategy to Enhance Electrical Performance-Numerically RF and DC Characteristics Extraction

Abstract

Graphene nanoribbon Field Effect Transistor (GNRFET) as a recently introduced interesting candidate has gotten a great deal of interest in many device fields. The paper has suggested a novel configuration in the case of only single gate on the top channel. The GNR is deposited on SiO2 considered as the thick buried oxide instead of SiC material in the single gate conventional GNRFET. This reformation is led to the gradual variation of the surface potential thus increasing the electric field and electron velocity. An increase in the drain current for the proposed device is the most important exploration in this work. The numerically extracted parameters by TCAD revealed the electrical performance improvement for both the DC and RF conditions in the cases of the ON current, sub-threshold swing, DIBL, Ion/Ioff, parasitic capacitances, transconductance, power gains, and output conductance. It is worth noting that the short channel effects are well controlled in the new proposed configuration. Also, the impact of different High-K dielectrics as the buried oxide on the electrical performance has been studied and the most suitable buried oxide has been selected to reach the best results.