Abstract
An array of GaN nanowires (NWs) on Si substrate is synthesized by molecular beam epitaxy. Measurements of electrical properties at room temperature of single NWs transferred to an auxiliary substrate demonstrate that the current density reaches an extremely high level of 2 MA cm−2 without NW damage. Taking into account the limited conductivity of the NW periphery due to electron surface states, that is, the conduction channel narrowing, the effective current density can reach 3 MA cm−2.
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Schedule a callMore From: physica status solidi (RRL) – Rapid Research Letters
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