Abstract
Time-domain and a new frequency analysis are used to investigate the effects of SETs in CMOS op amps of different feature sizes. Characterization in the frequency-domain was achieved by using non-linear regression techniques to obtain closed-form expressions of the transients. The full width at half-maximum (FWHM) and peak amplitude of the transient pulses were used for the time-domain analysis. The techniques were used to analyze the propagation of SET in op amps for LETs of 100 and 10 MeV/mg/cm2. It was observed that as the feature size of the op amps decreased, the average product of the peak voltage and FWHM decreased. In addition, as the feature size decreased, the 3-dB frequency of the op amps decreased increased. the abstract; it sets the footnote at the bottom of this column.
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