Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Adilson S Cardoso,Jeffrey H Warner,Laleh Najafizadeh,Nelson E Lourenco,Pauline Paki-Amouzou,John D Cressler,David M Fleischhauer,Zachary E Fleetwood,Michael W Mccurdy,Robert A Reed,Nedeljko Karaulac,Anup P Omprakash,Ani Khachatrian,Cher Xuan Zhang,En Xia Zhang,S Büchner ,Seungmin Jung ,Troy England ,D.m Fleetwood ,D Mcmorrow ,N Roche ,Partha Sarathi Chakraborty

doi:10.1109/tns.2014.2358078

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Adilson S Cardoso, Jeffrey H Warner + Show 20 more

https://doi.org/10.1109/tns.2014.2358078

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Journal: IEEE Transactions on Nuclear Science	Publication Date: Dec 1, 2014
Citations: 23

Affiliation: United States Naval Research Laboratory, Georgia Institute of Technology, Vanderbilt University, Rutgers, The State University of New Jersey, Defense Threat Reduction Agency

#Bandgap Reference Circuit #Total Ionization Dose + Show 8 more

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Abstract

This paper presents an investigation of the impact of single-event transients (SETs) and total ionization dose (TID) on precision voltage reference circuits designed in a fourth-generation, 90-nm SiGe BiCMOS technology. A first-order uncompensated bandgap reference (BGR) circuit is used to benchmark the SET and TID responses of these voltage reference circuits (VRCs). Based on the first-order BGR radiation response, new circuit-level radiation-hardening-by-design (RHBD) techniques are proposed. An RHBD technique using inverse-mode (IM) transistors is demonstrated in a BGR circuit. In addition, a PIN diode VRC is presented as a potential SET and TID tolerant, circuit-level RHBD alternative.

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