Single Event Latchup (SEL) in IDT 7187 SRAMs-dependence on ion penetration depth

J Levinson,O Even,D Ilberg,E Adler,Y Lifshitz,M Hass

doi:10.1109/radecs.1993.316563

Single Event Latchup (SEL) in IDT 7187 SRAMs-dependence on ion penetration depth

J Levinson, O Even + Show 4 more

https://doi.org/10.1109/radecs.1993.316563

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Publication Date: Sep 13, 1993

Citations: 6

#Single Event Latchup #Single Event Latchup Cross Section + Show 8 more

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Abstract

A study of Single Event Latchup (SEL) in IDT 7187 SRAMs is reported. Two important measurements concerning heavy ion SEL were demonstrated: (i) the dependence of the SEL cross section on the ion penetration depth, (ii) the latchup current distribution which can serve for the study of latchup paths. For IDT 7187, the measurements show a sharp decrease in the SEL cross section for penetration depths below /spl sim/15 /spl mu/m. The latchup current distribution reveals the existence of two main latchup paths. The importance of the present results for further studies is discussed. >

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