Abstract
Increased sensitivity of FinFET technology to single-event latch-up (SEL) was found during 64-MeV proton beam accelerated testing and confirmed with neutron beam experiments. TCAD simulations demonstrate that the $3\times $ shallower trench isolation in FinFET technology significantly increases both $\beta _{\mathrm {npn}}\cdot \beta _{\mathrm {pnp}}$ -product gain of parasitic CMOS SCR and SEL sensitivity. It is expected that other FinFET technologies with similar shallower trench isolation parameters will also experience increased SEL sensitivity.
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