Abstract
Eight commercially available n-channel power MOSFETs were exposed to high energy spallation neutrons and thermal neutrons in separate experiments. Single event burnout (SEB) was observed in several of the devices in both environments. Measurements of SEB at derated drain-source voltages show very strong reductions in burnout cross-sections, but suggest that current recommendations for safe operation of devices may need updating for high voltage devices. In one device a different failure mode was observed, with subsequent investigations suggesting that single event gate rupture (SEGR) was responsible. This first observation of SEGR in accelerated neutron testing of power MOSFETs represents a new consideration for designers of high voltage control systems.
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