Abstract
We studied the heavy-ion single event effect response of 3D NAND Flash memory cells with charge-trap based replacement gate technology. Error cross sections, threshold voltage shifts, and underlying mechanisms are discussed. The behavior of replacement gate cells is compared with previous generations of Flash NAND memory cells with floating gate architecture, both planar and 3D. The cell array structure, the technology parameters, and the materials impacting on radiation susceptibility of the different types of cells are discussed.
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