Abstract
Heavy ion irradiation testing was performed on AlGaN/GaN High Electron Mobility Transistors (HEMTs), both under DC and RF operation. Single gate finger radiation test structures and multiple gate finger RF power cells were tested and failure mechanisms analyzed. Chip level peak voltage measurements on L-band power AlGaN/GaN HEMTs are compared to Single Event Burn-out voltage levels extracted from DC Single Event Effect (SEE) test results.
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