Abstract
Focused high-energy ion microbeams were applied to the study of the basic mechanisms of single-event upset. Waveforms of the current transients induced by He-, C-, O- and Fe-ion strikes on silicon diodes were measured by applying extremely low beam currents of an order of 10 fA and a wide-bandwidth digitizing sampling technique. Total collected charges are evaluated from the transient currents as a function of LET (linear energy transfer), bias voltage, and doping level, and are compared with theoretical values calculated using conventional single-event models. It is found that irradiation effects on the total collected charges can be explained by the introduction of displacement atoms calculated using Coulomb potential and the Kinchin-Pease model.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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