Abstract
Metal/organic film/metal (MIM) junctions were fabricated using C 60 dispersed in spin-coated polyimide (PI) ultra-thin film. The current–voltage ( I– V) characteristics of these new types of junctions exhibit a Coulomb staircase behavior at a temperature of 15.5 K, a behavior not observed with C 60-free MIM junctions. It is obvious that the Coulomb staircase behavior observed was induced by C 60 acting as a central electrode of the single-electron tunneling junction. We then analyzed the I– V characteristics of this MIM junction, taking into account both the Coulomb charging energy and the discrete energy states of the molecular central electrode. Comparing the experimental ( V/ I)d I/d V– V characteristics with the calculated ones, a possible energy structure for C 60 in the junction was estimated.
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