Abstract
Detailed conditions of the fabrication of devices by SPM ultrafine oxidation are discussed and a new process is conceived for reducing the surface roughness compared with the conventional process. A single electron transistor (SET) with a side gate electrode is fabricated on an ultrathin Ti film deposited on an SiO2/Si substrate. Current oscillation with gate voltage is clearly observed for the first time in a Ti-based SET. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(10): 12–18, 1998
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