Abstract
Future quantum based electronic systems will demand robust and highly accurate on-demand sources of current. The ultimate limit of quantized current sources is a highly controllable device that manipulates individual electrons. We present a GaAs single-electron pump, where electrons are pumped through a one-dimensional split-gate saddle point confinement potential, which show quantized plateaus with length and width that can be independently tuned with the application of a source-drain bias and RF amplitude. The plateaus can be over two orders of magnitude longer than conventional pumps, and flatness improves with the application of a source-drain bias.
Highlights
We present a gallium arsenide (GaAs) single-electron pump, where electrons are pumped through a one-dimensional split-gate saddle point confinement potential, which show quantized plateaus with length and width that can be independently tuned with the application of a source-drain bias and RF amplitude
The plateaus can be over two orders of magnitude longer than conventional pumps, and flatness improves with the application of a source-drain bias
With the plateau length defined in terms of fitting parameters to the universal decay cascade model (UDC),18,19 the plateaus can be over two orders of magnitude longer than those of conventional pumps and turnstiles
Summary
We present a GaAs single-electron pump, where electrons are pumped through a one-dimensional split-gate saddle point confinement potential, which show quantized plateaus with length and width that can be independently tuned with the application of a source-drain bias and RF amplitude. Control of the source-drain bias (Vbias) and RF amplitude (ARF) allows for the plateau’s length, width, and minimum slope to be tuned independently.
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