Single electron effect transistor: Fabrication and observation

Abstract

Single Electron Effect Transistors (SEET) based on the Coulomb blockade effect, have been fabricated in a TEGFET (Two-dimensional Electron Gas Field Effect Transistors) like configuration which involves a small 2D (Two dimensional) electron gas island obtained by Schottky gates. At low temperature these devices demonstrate clearly the periodic conductance oscillations when the electron number in the island increases or decreases monotonously, non-linear I-V relation when the system is selected at a blocked state, and linear I-V relation for a conducting state.