Single-dopant resonance in a single-electron transistor

Abstract

Single dopants in semiconductor nanostructures have been studied in great detail recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report the coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental results are well explained by the rate-equation theory developed in parallel with the experiment.